Research - Research Achievements

Journal Papers



1.(1304) F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui:" Indium-Rich InGaP Nanowires Formed on InP(111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy, "Japanese Journal of Applied Physics, Vol. 52, pp. 04CH05-1-4(2013).

2.(1305) Yuta Kobayashi, Yoshinori Kohashi, Shinjiroh Hara, and JunichiMotohisa: "Selective- Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Filed-Effect Transistors, "Appl. Phys. Express, Vol. 6, No. 4, 045001 (4 pages)(2013).

3.(1306) T. Nakano and M. Akazawa:" Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment," IEICE Trans. Electron., Vol. E85- C, No. 5, pp.686-689 (2013).

4.(1307) M. Yoshimura, E. Nakai, K. Tomioka, andT. Fukui:" Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer,"Applied Physics Express, Vol. 6, pp. 052013-1-4 (2013).

5.(1308) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui:" GaAs/InGaP Core-Multishell Nanowire-Array-Based Solar Cells, "Japanese Journal of Applied Physics, vol. 52, pp. 055002-1-4 (2013).

6.(1309) T. Tanaka, Y. Nakano, and S. Kasai:" Fabrication and Characterization of GaAsbased Nanowire Devices Having with Multiple Asymmetric Gates for Electrical Brownian Ratcheting, "Jpn. J. Appl. Phys. vol. 52, issue 6, 06GE07 (6 pages)(2013).

7.(1310) M. Sato and S. Kasai:" Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method, "Jpn. J. Appl. Phys. vol.52, issue 6, 06GE08 (5 pages) (2013).

8.(1311) Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue:" Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plasitc Substrates, "Jpn. J. Appl. Phys. vol.52, issue 6, 06GE09 (3 pages) (2013).

9.(1312) M. Akazawa, M. Chiba, and T. Nakano:"Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN," Appl. Phys. Lett., Vol. 102, No.23, pp. 231605-1-3 (2013).

10.(1313) Y. J. Hong, J.W.Yang, W. H. Lee, R. S. Ruoff, K. S. Kim, T. Fukui:"Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs, "Advanced Materials Vol.25, pp. 6847-6853(2013).

11.(1314) Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui:" Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique, "Nano Letters, vol. 13, pp. 5822-5826 (2013).

12.(1315) Katsuhiro Tomioka and Takashi Fukui:" Vertical III-V Nanowire-Channel on Si, " ECS Trans. Vol. 58, pp. 99-114 (2013).

13.(1316) R. Jinbo, Y. Kumazaki, Z. Yatabe and T. Sato:" Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures, "ECS Trans. Vol. 58, pp. 247-252 (2013).

14.(1317) Keita Konishi, Zhixin Cui, Takahiro Hiraki and Kanji Yoh:" Spin Injection into Epitaxial Graphene on Silicon Carbide, "J. Crystal Growth, vol. 378, pp. 385-387 (2013).

15.(1318) Z. Cui, Fauzia Jabeen, J.-C. Harmand, and Kanji Yoh:"Fabrication and Characterization of a δ-dope InAs/InP Core Shell Nanowire Transistor, "J. Crystal Growth, vol. 378, pp. 511-514 (2013).

16.(1319) 冨岡克広、福井孝志: " 半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用- (招待論文), "電子情報通信学会論文誌C, Vol. J96-C, No. 9, pp. 221-230 (2013).

17.(1320) Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato: "Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices, "Applied Surface Science, vol. 279, pp. 116-120 (2013).

18.(1321) K. Ohi, J, T. Asubar, K, Nishiguchi, and T, Hashizume:" Current stability in multimesa- channel AlGaN/GaN HEMTs (Invited paper),"IEEE Trans. Electon Devices, 60, 2997-3004 (2013).

19.(1322) Y. Hori, Z. Yatabe, and T. Hashizume:" Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors, "J, Appl. Phys. 114, pp. 244503-1-8 (2013).

20.(1323) X. Yin and S. Kasai:" Graphene-based three-branch nano-junction (TBJ) logic inverter, "Phys. Status Solidi C, vol. 10, issue 11, pp. 1485-1488 (2013).

21.(1324) S. Kasai, M. Aono, and M. Naruse:"Amoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network, "Appl. Phys. Lett. vol. 103, pp 163703-1-4 (2013).

22.(1325) M. Matys, B. Adamowicz, Y. Hori, and T. Hashizume:" Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method,"Appl. Phys. Lett. 103, pp. 021603-1-4 (2013).

23.(1326) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui:" Indium tin oxide and indium phosphide heterojunction nanowire array solar cells, "Appl. Phys. Lett. vol. 103, pp. 243111-1-3(2013).

24.(1327) S. Kasai, Y. Tadokoro, and A. Ichiki:" Design and characterization of nonlinear functions for the transmission of a small signal with non-Gaussian noise, "Phys. Rev. E vol. 88, p. 062127 (6 pages) (2013).

25.(1328) Y. Otsu, K. Kubo, M. Ikebe, and E. Sano:" Design and fabrication of 2.4 GHz pre-biased rectifier, "Analog Integrated Circuits and Signal Processing, Vol.79, pp. 301-307 (2014).

26.(1329) 橋詰保、谷田部然治、佐藤威友:" 窒化物半導体異種接合の界面評価と制御(研究紹介), "表面科学、35 巻、2 号、96-101(2014).

27.(1330) Katsuhiro Tomioka and Takashi Fukui: "Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction, "Applied Physics Letters Vol.104, pp. 073507-1-4(2014).

28.(1331) Yoshinori Kohashi, Shinjiroh Hara, and Junichi Motohisa:"Composition-Dependent Growth Dynamics of Selectively Grown InGaAs Nanowires, "Mater. Res. Express, Vol. 1, No. 1, 015036 (11pages) (2014).

29.(1332) M. Akazawa and T. Nakano:"Interface Investigation of High-Temperature-Annealed Ultrathin-ALD-Al2O3/InAlN Structures," e-Journal of Surface Science and Nanotechnology, Vol. 12, pp. 83-88 (2014).

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