国際会議における講演：６１件（うち招待講演１３件）

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1121) K. Tomioka and T. Fukui: " Realization of steep-slope behavior in tunnel FETs using InAs nanowire/Si hetero junction, " 2012 Materials Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13 (2012).

2.(1122) K. Ikejiri, K. Tomioka, and T. Fukui: " Bi-directional growth of Zn-doped InP nanowires by selective-area MOVPE, " 2012 Materials Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13 (2012).

3.(1123) S. Hara and M. Yatago: " Hybrid Structure of Semiconducting Nanowires and Ferromagnetic Nanoclusters Grown by Selective-Area Metal-Organic Vapor-Phase Epitaxy (Invited), " 2012 Materials Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13 (2012).

4.(1124) T. Hashizume:"In-grown and process-induced deep levels in AlGaN alloys (Invited), "International Workshop on " Frontier of Nitride Semiconductor Alloy Photonics (NSAP), "Hotel Springs, Chiba, May 10 (2012).

5.(1125) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: " GaAs core-shell nanowire array solar cells on masked GaAs (111)B substrates, " 9th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Eindhoven, Netherlands, May 7-9 (2012).

6.(1126) K. Tomioka, M. Yoshimura, and T. Fukui: " Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices, "The 16th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE.XVI), Busan, KOREA, May 20-25 (2012).

7.(1127) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka: " Com.pound Semiconductor Nanowire Solar Cells (Invited), "The 16th International Con.ference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVI), Busan, KOREA, May 20-25 (2012).

8.(1128) K. Ohi and T. Hashizume:"Reduction of o.-stress-induced current collapse in multi.mesa-channel AlGaN/GaN HEMT, "36th Workshop on Semiconductor Devices and Integrated Circuits (WOCSDICE-2012), Porquerolles, France, May 28-30 (2012).

9.(1129) Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume: " E.ects of ICP Etching of Al-GaN on Interface Properties of Al2O3/AlGaN/GaN Structures, "36th Workshop on Semiconductor Devices and Integrated Circuits (WOCSDICE-2012), Porquerolles, France, May 28-30 (2012).

10.(1130) Y. Hori, Z. Yatabe, and T. Hashizume: " Characterization of MOS interfaces based on GaN-related heterostructures, " Workshop on Dielectrics in Microellectronics (WoDiM 2012), Dresden, Germany, June 25-27 (2012).

11.(1131) S. Kasai, S. F. A. Rahman, M. Sato, X. Yin, and T. Maemoto: " Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits (Invited), " 2012 Asia-Paci.c Workshop on Fundamentals and Applications of Advanced Semi.conductor Devices (AWAD2012), Naha, Japan, June 27 -29 (2012).

12.(1132) T. Tanaka, Y. Nakano, T. Muramatsu, and S. Kasai: " Fabrication and Charac.terization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet, " 2012 Asia-Paci.c Workshop on Fundamentals and Applications of Ad.vanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27 -29 (2012).

13.(1133) T. Nakano and M. Akazawa: " E.ect of hydro.uoric acid treatment on InAlN sur.faces,"2012 Asia-Paci.c Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27 -29 (2012).

14.(1134) K. Ohi and T. Hashizume: " Improved current stability in multi-mesa-channel Al-GaN/GaN HEMTs, " 2012 Asia-Paci.c Workshop on Fundamentals and Applica.tions of Advanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27 -29 (2012).

15.(1135) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: " InP/AlInP core-multishell nanowire array solar cells by Selective-Area MOVPE, "the 31st Electronic Materials Symposium (EMS-31), " Shizuoka, Japan, Jul. 11-13 (2012).

16.(1136) Y. Kohashi, Y. Kobayashi, M. Yatago, S. Hara, and J. Motohisa: " Fabrication of Highly Uniform InGaAs Nanowires in 30 nm-Diameter Openings with Lower Density in Selective-Area Metal-Organic Vapor-Phase Epitaxy, "the 31st Electronic Materials Symposium (EMS-31), Izu, Japan, July 11-13 (2012).

17.(1137) S. Yanase, Y. Kohashi, K. Ikejiri, S. Hara, and J. Motohisa: " Selective Growth and Characterization of InP Nanowires by Metal-Organic Vapor-Phase Epitaxy, " the 31st Electronic Materials Symposium (EMS-31), Izu, Japan, July 11-13 (2012).

18.(1138) K. Tomioka and T. Fukui: " Steep-slope tunnel .eld-e.ect transistors using III-V nanowire/Si hetero junction (Invited), " IEEE VLSI symposia, Hawaii, USA, July 12-15 (2012).

19.(1139) M. Matys, M. Miczek, B. Adamowicz, and T. Hashizume: " A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance-voltage and photocapacitance.light intensity measurements, " 31st International Conference on the Physics of Semiconductors (ICPS 2012), Zurich, Switzerland, Jul. 29-Aug. 3 (2012).

20.(1140) Z. Cui, T. Ishikura, J.-C. Harmand, and Kanji Yoh: " Fabrication and Characteri.zation of InAs Nanowire Spin Transistor Structure, "31st International Conference on the Physics of Semiconductors (ICPS 2012), Zurich, Switzerland, Jul. 29-Aug. 3 (2012).

21.(1141) T. Ishikura, Z. Cui, K.Konishi, and Kanji Yoh:"Hall voltage dependence on magne.tization of source electrode in an inverted InAs Heterostructure, "31st International Conference on the Physics of Semiconductors (ICPS 2012), Zurich, Switzerland, Jul. 29-Aug. 3 (2012).

22.(1142) Kanji Yoh, Z. Cui, K. Konishi, M.Ohno, K.Blekker, W.Prost, F.-J. Tegude, and J..C. Harmand: " An InAs Nanowire Spin Transistor, "70th Annual Device Research Conference (DRC), Pennsylvania State University, VA, USA, (2012).

23.(1143) Kanji Yoh, T. Moriuchi, and M.Inoue: " Electrical Control of Nuclear-Spin-Induced Hall Voltage in an Inverted InAs Heterostructure, "70th Annual Device Research Conference (DRC), Pennsylvania State University, VA, USA, (2012).

24.(1144) S. N. Yanushkevich, G. Tangim, S. Kasai, S. E. Lyshevski, and V. P. Shmerko:"De.sign of nanoelectronic ICs: noise-tolerant logic gates based on loopy BDD schemes, " 12th International Conference on Nanotechnology (IEEE NANO 2012), Birming.ham, UK, Aug. 20-23 (2012).

25.(1145) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: " InP/AlInP core-multishell nanowire array solar cells, "the 39th Internal Symposium on Compound Semicon.ductor, Santa Barbara, California, USA, Aug. 27-30 (2012).

26.(1146) S. Kasai, M. Sato, T. Tanaka, X. Yin, R. Kuroda, and Y. Imai: " Nonlinear Behav.iors in III-V Semiconductor Nanowires and Their Application to Information Detec.tion and Processing (Invited), " The First International Workshop on Information Physics and Computing in Nano-scale Photonics and Materials (IPCN), University of Orl´eans, France, September 7 (2012).

27.(1147) T. Mohamed, S. N. Yanushkevich, and S. Kasai: " Fault-Tolerant Nanowire BDD circuits, " The First International Workshop on Information Physics and Comput.ing in Nano-scale Photonics and Materials (IPCN), University of Orl´eans, France, September 7 (2012).

28.(1148) T. Tanaka, E. Sano, and B. Fugetsu: " Carbon nanotube network with reduced sheet resistance, " EMRS (Warsaw, Poland), Sept. 17-21, (2012).

29.(1149) T. M. Dieb, M. Yoshioka, and S. Hara: " Automatic Information Extraction of Experiments from Nanodevices Development Papers, "3rd IIAI International Con.ference on e-Survices and Knowledge Managemant (IIAI ESKM 2012), Fukuoka, Japan, September 20-22 (2012).

30.(1150) Tomotsugu Ishikura, Zhixin Cui, Keita Konishi, Joungeob Lee, and Kanji Yoh: " Bias dependence of spin accumulation in Fe/n+-Si interface, "International Con.ference on Molecular Beam Epitaxy (MBE), Nara, September 24 -27 (2012).

31.(1151) Z. Cui, Fauzia Jabeen, J.-C. Harmand, and Kanji Yoh: " Fabrication and Charac.terization of a δ-dope InAs/InP Core Shell Nanowire Transistor, " International Conference on Molecular Beam Epitaxy (MBE), Nara, September 24 -27 (2012).

32.(1152) Keita Konishi, Zhixin Cui, Takahiro Hiraki, and Kanji Yoh: " Spin Injection into Epitaxial Graphene on Silicon Carbide, " International Conference on Molecular Beam Epitaxy (MBE), Nara, September 24 -27 (2012).

33.(1153) K. Tomioka, M. Yoshimura, and T. Fukui: " First demonstration of tunnel .eld-e.ect transistor using InGaAs/Si junction, "2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

34.(1154) F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui: " InGaP Nanowires grown by Selective-Area MOVPE, " 2012 International Conference on Solid State Devices and Materials (SSDM2012), Kyoto, Japan, Sep. 25-27 (2012).

35.(1155) Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume: " Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface,"2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

36.(1156) S. Sakita, M. Yatago, and S. Hara: " Growth and Characterization of AlGaAs Nanowires on Insulating Al2O3 Layers by Selective-Area Metal-Organic Vapor-Phase Epitaxy, " 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

37.(1157) Y. Kohashi, S. Sakita, S. Hara, and J. Motohisa: " Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-Area Metal-Organic Vapor-Phase Epitaxy, " 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

38.(1158) D. Uchida, M. Ikebe, J. Motohisa, and E. Sano: " A ramp-wave generator with interleaved DACs for single-slope ADC, " 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

39.(1159) Y. Kumazaki, T. Kudo, Y. Yatabe, and T. Sato: " Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process, " 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, JAPAN, Sep. 25-27 (2012).

40.(1160) T. Sato, R. Jinbo, and Z. Yatabe: " Photoelectric-conversion Devices Based on InP Porous Structure, " 2012 Paci.c Rim Meeting on Electrochemical and Solid-State Science, Honolulu, USA, October 7-12 (2012).

41.(1161) T. Hashizume, Y. Hori, S. Kim, Z. Yatabe, and M. Akazawa: " Insulated gate technologies for high-performance GaN transistors (Invited), "International Work.shop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan, October 14 -19 (2012). 42.(1162) M. Akazawa and T. Nakano: " E.ects of surface treatment on InAlN investigated by X-ray photoelectron spectroscopy, "International Workshop on Nitride Semicon.ductors 2012 (IWN2012), Sapporo, Japan, October 14 -19 (2012).

43.(1163) K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui: " Bi-directional growth of InP nanowires by selective-area MOVPE, "The 1st International Conference on Emerg.ing Advanced Nanomaterials (ICEAN), Brisbane, Australia, Oct. 22-25 (2012).

44.(1164) Takashi Fukui, Keitaro Ikejiri, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka, "Compound Semiconductor Nanowire Solar Cells (Invited), " The 1st International Conference on Emerging Advanced Nanomaterials (ICEAN), Brisbane, Australia, Oct. 22-25 (2012).

45.(1165) K. Tomioka and T. Fukui: " Integration of III-V nanowires on Si and their applica.tions (Invited), "25th International Microprocesses and Nanotechnology Conference (MNC 2012), Kobe, Japan, Oct.30-Nov.2 (2011).

46.(1166) T. Endo, E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: " Flexible InP nanowire array obtained by epitaxial growth and peeling o. process for solar cell application, " 25th International Microprocesses and Nanotechnology Conference (MNC 2012), Kobe, Japan, Oct. 30-Nov. 2 (2012).

47.(1167) T. Tanaka, Y. Nakano, and S. Kasai: " Fabrication and Characterization of A GaAs Nanowire Device Having Multiple Asymmetric Gates for Electrical Brown.ian Ratchet, " 25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2, 2012.

48.(1168) M. Sato and S. Kasai: " Characterization of GaAs-based three-branch nanowire junction devices by light-induced local resistance modulation method, "25th Inter.national Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2 (2012).

49.(1169) Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue: " Recti.ca.tion E.ects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plas.tic Substrates, "25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2 (2012).

50.(1170) S. Sakita, M. Yatago, and S. Hara: " Selective-Area Metal-Organic Vapor-Phase Epitaxy of AlGaAs Nanostructures on Crystallized Insulating Al2O3/ Layers, "25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2 (2012).

51.(1171) T. Sato: " High-sensitive ISFETs Based on Semiconductor Porous Nanostructures (Invited), " BIT 's 3rd Annual World Congress of NanoMedicine-2012, Shenzhen, China, November 1-3, (2012).

52.(1172) Kanji Yoh: "Spin Injection and Transport Characteristics of Single Layer Graphene Grown on 4H-SiC,"International Symposium on Graphene Devices (ISGD-3), Paris, France, November 5 -9 (2012).

53.(1173) T. Hashizume: " Characterization and control of insulated gates for GaN power switching transistors (Invited), "The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM-2012), Smolenice, Slovakia, Nov. 11-15 (2012).

54.(1174) K. Tomioka, M. Yoshimura, and T. Fukui: " First demonstration of tunnel .eld-e.ect transistor using InGaAs nanowire/Si hetero junction,"MRS 2012 Fall meeting, Boston, USA, Nov.25-30 (2012).

55.(1175) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: " GaAs/InGaP core-multishell nanowire array solar cells by selective-area metal organic vapor phase epitaxy, "2012 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, Nov. 25-30 (2012).

56.(1176) Takashi Fukui, Masatoshi Yoshimura, Takahito Endo, Eiji Nakai, and Katsuhiro Tomioka, "Compound Semiconductor Nanowire Solar Cells (Invited),"2012 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, Nov. 25-30 (2012).

57.(1177) Y. Kohashi, S. Sakita, S. Hara, and J. Motohisa: " Selective-Area Growth of Highly Uniform and Thin InGaAs Nanowires by Two-Step growth Method, "2012 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, Nov. 25-30 (2012).

58.(1178) S. Kasai, T. Tanaka, and M. Sato: " Design and Formation of Multiple Asymmetric Potential in a GaAs-based Nanowire for Electron Brownian Ratchet, "2012 Work.shop on Innovative Devices and Systems (WINDS), Kohala, Hawaii, USA, Dec. 2 .7 (2012).

59.(1179) Kisu Kim, Masayuki Ikebe, and Junichi Motohisa, and Eiichi Sano:"A 11b 5.1 μ W multi-slope ADC with a TDC using multi-phase clock signals, "IEEE International Conference on Electronics, Circuits, and Systems (Seville, Spain), Dec. 9-12 (2012).

60.(1180) S. Hara: " Selective-Area Metal-Organic Vapor Phase Epitaxy of Ferromagnetic MnAs Nanoclusters and MnAs/GaAs Hybrid Nanowires (Invited), "2012 Collabo.rative Conference on Crystal Growth (3CG 2012), Orlando, Florida, USA, December 11-14 (2012).

61.(1181) Katsuhiro Tomioka and Takashi Fukui: " High-performance III-V nanowire transis.tors on silicon (Invited), "The Sweden-Japan Workshop on Quantum Nano-Physics and Electronics(QNANO2013), Tokyo, Jan. 13-14(2013).