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2012 RCIQE International Workshop for Green Electronics
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March 5-6, 2012
Conference Hall, Hokkaido University Sponsored by Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
Map of Hokkaido University and RCIQE
Program (download PDF version)
(Monday, March 5)
| 9:30 - 9:40 | "Opening Address" |
| - Wide-Bandgap Power Devices - | |
| 9:40 - 10:20 | "SiC Bipolar Junction Transistors" |
| J. Suda, Kyoto Univ., Japan | |
| 10:20-10:45 | "GaN Devices for Automotive Applications" |
| D. Kikuta, JST-CREST and Toyota Central Res. & Dev.Labs., Japan | |
| 10:45-11:10 | "GaN-based MOS Structures Processed with Plasma-Assisted Dry Etching" |
| T. Hashizume, JST-CREST and Hokkaido Univ., Japan | |
| 11:10-11:30 | Coffee Break |
| 11:30- 12:05 | Effect of Oxide/Barrier Interface Traps on the Electrical Properties of GaN based MOS- HEMTs |
| M. Tapajna, Slovak Academy of Science, Slovakia | |
| 12:05-12:30 | Switching Characteristics of Newly Developed DC/AC Inverter based on GaN HEMT |
| M. Okamoto, JST-CREST and Yamaguchi Univ., Japan | |
| 12:30-13:30 | Lunch Break |
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- Nanostructure Solar Cells -
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| 13:30-14:10 | "Nanowires with Promise for Solar Energy Harvesting" |
| M. Borgstrom, Lund Univ., Sweden | |
| 14:10-14:30 | "Compound Semiconductor Nanowire Solar Cells" |
| T. Fukui, Hokkaido Univ., Japan | |
| 14:30-15:00 | Photoluminescence of Si Nanoparticles Produced from Si Swarf with Photochemical Reactions |
| T. Matsumoto, Osaka Univ. and JST-CREST, Japan | |
| 15:00-15:20 | Coffee Break |
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- Nanowires -
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| 15:20-16:00 | "Broadband Si:Ge Nano Optoelectronics" |
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M. H. Jo, POSTECH, Korea |
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| 16:00-16:30 | "Doping and Characterization of Impurity Atoms in Silicon and Germanium Nanowires" |
| N. Fukata, NIMS, Japan | |
| 16:30-17:40 | Poster Viewing Session |
| Lab Tour to RCIQE (17:00 - 18:00) | |
| 18:00 - 19:30 | Reception (Centennial Hall, Hokkaido Univ.) |
(Tuesday, March 6)
| - Spintronics - | |
| 9:20-10:00 | "Ordered Arrangements of MnAs Clusters - with Few Clusters towards Novel Planar Magneto-Electronic Devices" |
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P. J. Klar, University of Giessen, Germany |
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| 10:00-10:20 | "Bottom-Up Fabrication of Ferromagnetic MnAs Nanoclusters by Selective-Area MOVPE for Planar Magneto-Resistive Devices" |
| S. Hara, Hokkaido Univ., Japan | |
| 10:20-10:40 | Coffee Break |
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- Physics and Device Applications -
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| 10:40-11:10 | "Generation of Continuous Millimeter-/ Sub-Millimeter-Waves Using Uni-Travelling-Carrier Photodiode" |
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H. Ito, Kitasato Univ., Japan |
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| 11:10-11:40 | "Current Noise and Fluctuation Theorem in Mesoscopic Systems" |
| K. Kobayashi, Kyoto Univ., Japan | |
| 11:40-12:00 | "Electronic Stochastic Resonance in Semiconductor Nanodevices and Their Networks" |
| S. Kasai, Hokkaido Univ., Japan | |
| 12:00-13:00 | Lunch Break |
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- Advanced Nano-Devices -
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| 13:00-13:30 | "Photoluminescent Properties of III-V Semiconductor Nanoparticles and Their Device" Applications |
| M. Izumi, Sharp Co., Japan | |
| 13:30-14:00 |
"Memristive Switching in a Single Oxide Nanowire" |
| T. Yanagida, Osaka Univ., Japan | |
| 14:00-14:30 | "III-V Nanowire Surrounding-Gate Transistors and Tunnel FET using InAs/Si Heterojunction" |
| K. Tomioka, JST-PRESTO and Hokkaido Univ., Japan | |
| 14:30-14:40 | "Closing Remarks" |
| Registration fee: free, Reception fee: 1000 yen | |
| CorrespondenceF | Taketomo Sato, RCIQE, Hokkaido University |
| FAX: +81-11-716-6004 | |
| e-mail: taketomo@rciqe.REMOVEME.hokudai.ac.jp (remove REMOVEME from the address) | |
| http://www.rciqe.hokudai.ac.jp/conferences/seminar2012.html | |